José Alberto Piedra Lorenzana
| Affiliation | Department of Electrical and Electronic Information Engineering |
|---|---|
| Title | Assistant Professor |
| Fields of Research | Semiconductor Physics / Optoelectronics / Crystal Growth |
| Degree | Dr. of Engineering (Toyohashi University of Technology) |
| piedra.lorenzana.jose.alberto.ei@ Please append "tut.jp" to the end of the address above. |
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| Laboratory website URL | http://www.int.ee.tut.ac.jp/photon/ |
| Researcher information URL（researchmap） | Researcher information |
Research
Si-based photonic integrated chips are now widely used for short-reach optical fiber communications in data centers because of a low power consumption and a large capacity with a low cost fabrication. Near-infrared pin photodetectors (PDs) of a Ge layer epitaxially grown on Si is one of the fundamental building blocks in Si photonics. In this study we focus on the fabrication of high crystal quality and low cost production of Ge PDs based on Si technology.