Ishikawa, Yasuhiko
| Affiliation | Department of Electrical and Electronic Information Engineering |
|---|---|
| Concurrent post | Cooperative Research Facility Center Institute for Research on Next-generation Semiconductor and Sensing Science (IRES²) |
| Title | Professor |
| Fields of Research | Semiconductor Devices, Silicon Photonics |
| Degree | Ph.D. (Hokkaido University) |
| Academic Societies | Japan Society of Applied Physics, IEEE, SPIE, MRS, ECS |
| ishikawa@ee Please append ".tut.ac.jp" to the end of the address above. |
|
| Laboratory website URL | https://www.int.ee.tut.ac.jp/photon/ |
| Researcher information URL（researchmap） | Researcher information |
Research
Silicon photonics is a technology to integrate ultrasmall photonic devices on a Si chip using LSI processes. Such integrated photonic devices are strongly required for low-power and high-capacity information transmission. High-preformance active photonic devices operating at the near-infrared communication wavelengths (1.3-1.6 μm) are integrated on a Si chip with passive photonic devices such as optical waveguides and optical filters. Based on state-of-the-art SiGe epitaxial growth technology, novel photonic devices using group-IV epitaxial layers on Si are proposed and realized.
Theme1：Si-based Waveguides
Overview
Si/Si nitride waveguides enable light propagation on a Si chip for high-capacity optical communications (wavelength: 1.3 - 1.6 µm) as well as optical interconnections in high-performance LSIs such as AI chips. Photonic integration chips are fabricated on standard bulk Si wafers as well as SOI (Si-on-insulator) wafers.
Theme2：Ge-on-Si Photodetectors
Overview
Photodetectors are inevitably necessary to convert optical signals to electrical ones for the processing with LSIs. Ge, a group-IV semiconductor similar to Si, has a good compatibility with Si processing technology. Integrated photodetectors of high-quality Ge epitaxial layer have been realized.
Theme3：Light Sources on Si
Overview
Si is not good at light-emitting devices. Despite Ge possessing an indirect bandgap structure similar to Si, efficient light emission is expected by utilizing appropriate band engineering. Light-emitting devices (especially lasers) are being explored for light sources on Si. Novel group-IV (group-14) nitrides are being investigated to enhance nonlinear optical effects for wavelength conversion devices that generate light of different wavelengths from a single wavelength.
Title of class
Analytical Electromagnetism II
Electromagnetic Wave Engineering
Engineering and Science Laboratory
Quantum Optoelectronics