Establishing an elemental structure that facilitates high-intensity broadband spin waves
Press Releases | December 20, 2021
Contributing to the realization of ultra-low energy consuming spin-wave circuits
Release Subtitle: Contributing to the realization of ultra-low energy consuming spin-wave circuits Overview A research team including Assistant Professor Taichi Goto of Toyohashi University of Technology has conducted simulations to demonstrate that using a substrate that combines the semiconductor silicon (Si) and the magnetic insulator yttrium iron garnet (YIG) can realize an element that facilitates excitation and detection of high-intensity broadband spin waves, even when miniaturized like chips. It is hoped that spin waves can be used in next-generation ultra-low energy consumption devices because they transmit through magnetic insulators that do not let electric currents through. At the same time, it is thought that it can be combined with generally and widely used semiconductor devices, and this research may serve as an indicator for substrate technology and material development that have that aim.
This research was jointly conducted by PhD candidate Kanta Mori, Takumi Toguchi, Assistant Professor Taichi Goto, Associate Professor Yuichi Nakamura, Professor Lim Pang Boey, and Visiting Professor Mitsuteru Inoue of Toyohashi University of Technology as well as Chief Researcher Toshiaki Watanabe of Shin-Etsu Chemical and Professor Alexander Ustinov of Saint Petersburg Electrotechnical University.