|Affiliation||Department of Mechanical Engineering|
|Title||Professor / Presidential Advisor (Strategic Research Planning) / Deputy Director of Research Administration Center (RAC)|
|Fields of Research||Thin film science and technology / Solid-state electrochemistry|
|Degree||Doctor of Engineering|
|Academic Societies||The Electrochemical Society(USA) /american Chemical Society(ACS)/Japan Society of Applied Physics /The Electrochemical Society of Japan / Chemical Society of Japan|
Please append ".tut.ac.jp" to the end of the address above.
|Laboratory website URL||http://www.tf.me.tut.ac.jp|
My research interests are focused on preparation of semiconducting and ferromagnetic oxide thin films and construction of electronics devices including photovoltaic devices with electrochemical reactions in aqueous solutions. Major research activities are on the preparation and controlling the quality of oxide semiconductors (ZnO,Cu2O,CuO), construction and science on the oxide and hybrid photovoltaic device (bulk and heterointerface science), and development of Cu(InGa)Se2 photovoltaic device.
Theme1：Preparation of high quality smart oxide thin films by solution chemical process based on thermodynamics
The electrodeposition processes in aqueous solutions were developed for the preparation of oxide semiconductors such as n-ZnO,n-CeO2,p-Cu2O,p-Ag2O and ferromagnetic Fe3O4 layers. And, the semiconductor quality was improved by electrochemical heteroepitaxial growth, and room-temperature ultraviolet-light-emitting ZnO, high mobility-Cu2O, and excellent photosensitive CuO semiconductor layers have been fabricated. The morphology of ZnO was controlled from continuous layer to vertical nanowire array.
M. Izaki, et al., Appl. Phys. Lett., 68(1996), 2439.
M. Izaki, et al., J.Electrochem. Soc., 158(2011), D578.
M. Izaki, et al., Cryst. Growth & Design, 11(2011), 5533.
M. Izaki, et., J. Phys. Chem. C, 116(2012), 15925.
M. Izaki, et al., Cryst. Growth & Design, 13(2013), 52.
M. Izaki, et al., J. Mater. Chem. C, 2(2014), 2908.
Theme2：Construction of new photovoltaic devices, oxide and hybrid photovoltaic devices.
Fundamental studies on oxide photovoltaic devices with copper oxide (Cu2O & CuO)-light-absorbing layers and hybrid photovoltaic devices composed of oxide semiconductors and organic semiconductors such as C60 and phthalocyanine compounds are performed to open the door to high performance solar cells by using solution electrochemical process and vacuum processes including electron-beam and thermal evaporation and sputtering techniques under financial supports of JSPS, JST, and NEDO. Figure shows the change in surface potential of the surface for Ga:ZnO:Cu-phthalocyanine bulk heterojunction layer by irradiating light with photon-assisted kelvin force microscopy(PKFM).
M. Izaki, et al., J. Phys. D: Appl. Phys., 40(2007), 3326.
M. Izaki, et al., American Chemical Society, Appl. Mater. Interface, 4(2012), 3558.M. Izaki, et al.,American Chemical Society, Appl. Mater. Interface, 5(2013), 9386.
M. Izaki, et al., RSC Advance, 4(2014), 14956.
Theme3：Thermodynamic design of soft-solution processing
Theoretical design and consideration of the solution electrochemical process based on thermochemistry are performed to develop the process for preparing smart oxide semiconductors from aqueous solutions. The calculation of potential-pH diagram and solubility curves is carried out for the process we use, and we have demonstrated the advantage of the thermochemistry simulation for the design of the CuO semiconductor preparation process. And, light-assisted electrochemical process for stacking the n-ZnO on p-Cu2O has been developed based on the chemistry of the semiconductor/solution interface as shown in figure.
M. Izaki, et al., Electrochem. Solid State Lett., 14, D30(2011).
B. M. Fariza, M. izaki, et al., Thin Solid Films, 520(2012), 2261.
Title of class
Introduction to mechanical engineering（B11530050),Physics III(B1013007b), Material science(B11620210),Fundamental Material Science(B11622010),Projective research(B11510080),Mterial processing technology(M21622030)，Production enginnering(D311030030)，Science and technology of thin films(M41630080)